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Article cité :
M. Balkanski , J. des Cloizeaux
J. Phys. Radium, 21 12 (1960) 825-834
Citations de cet article :
42 articles
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Zinc Oxide Materials for Electronic and Optoelectronic Device Applications
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Valence-band ordering in ZnO
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Self-Steepening and Self-Compression of Ultrashort Optical Pulses in a Defocusing CdS Crystal
J.-F. Lami, S. Petit and C. Hirlimann82 (5) 1032 (1999)https://doi.org/10.1103/PhysRevLett.82.1032
Two-photon excited room-temperature luminescence of CdS in the femtosecond regime
J.-F. Lami and C. Hirlimann60 (7) 4763 (1999)https://doi.org/10.1103/PhysRevB.60.4763
Nitride Semiconductors and Devices
Hadis Morkoç32 45 (1999)https://doi.org/10.1007/978-3-642-58562-3_3
Gallium Nitride (GaN) I
H. Morkoç, F. Hamdani and A. Salvador50 193 (1997)https://doi.org/10.1016/S0080-8784(08)63089-6
Progress and prospects of group-III nitride semiconductors
S.N Mohammad and H Morkoç20 (5-6) 361 (1996)https://doi.org/10.1016/S0079-6727(96)00002-X
Ground and excited state exciton spectra from GaN grown by molecular-beam epitaxy
D. C. Reynolds, D. C. Look, W. Kim, Ö. Aktas, A. Botchkarev, A. Salvador, H. Morkoç and D. N. Talwar80 (1) 594 (1996)https://doi.org/10.1063/1.362724
Observation of Interband Two-Photon Absorption Saturation in CdS
J.-F. Lami, P. Gilliot and C. Hirlimann77 (8) 1632 (1996)https://doi.org/10.1103/PhysRevLett.77.1632
Landau Level Spectroscopy
E.I. RASHBA and V.I. SHEKA27 131 (1991)https://doi.org/10.1016/B978-0-444-88535-7.50011-X
Two‐beam interferometry in the exciton spectroscopy of CdS
M. P. Lisitsa, S. P. Terekhova and N. A. Onishchenko115 (1) 187 (1983)https://doi.org/10.1002/pssb.2221150121
Excitons
DONALD C. REYNOLDS and THOMAS C. COLLINShttps://doi.org/10.1016/B978-0-12-586580-7.50005-7
Excitons
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Solar Energy Conversion
M. Savelli and J. Bougnot31 213 (1979)https://doi.org/10.1007/3-540-09224-2_6
A quantitative study of excitonic polariton reflectance in CdS II. B‐exciton and κ‐linear term
I. Broser and M. Rosenzweig95 (1) 141 (1979)https://doi.org/10.1002/pssb.2220950116
Γ-Point Valence-Band Energy Levels in CdS Determined from Excited States ofA- andB-Band Excitons
C. W. Litton, D. C. Reynolds and T. C. Collins6 (6) 2269 (1972)https://doi.org/10.1103/PhysRevB.6.2269
Energy spectrum of direct excitons in wurtzite-type semiconductors
N. O. Lipari8 (2) 406 (1972)https://doi.org/10.1007/BF02743669
Exciton Energy Levels in Wurtzite-Type Crystals
Nunzio O. Lipari4 (12) 4535 (1971)https://doi.org/10.1103/PhysRevB.4.4535
Exchange Interaction between Excitons in the Quasi‐Cubic Model
T. Skettrup and I. Balslev40 (1) 93 (1970)https://doi.org/10.1002/pssb.19700400111
Optical Properties of Solids
D. C. Reynoldshttps://doi.org/10.1007/978-1-4757-1123-3_10
Energy Bands of Hexagonal II-VI Semiconductors
U. Rössler184 (3) 733 (1969)https://doi.org/10.1103/PhysRev.184.733
Valence Band Structure of Wurtzite Type Crystals
E. Jahne and E. Gutsche21 (1) 57 (1967)https://doi.org/10.1002/pssb.19670210103
Spin‐Orbit Splitting of the Valence Band of Wurtzite Type Crystals
E. Gutsche and E. Jahne19 (2) 823 (1967)https://doi.org/10.1002/pssb.19670190235
Convergence Study of a Self-Consistent Orthogonalized-Plane-Wave Band Calculation for Hexagonal CdS
R. N. Euwema, T. C. Collins, D. G. Shankland and J. S. DeWitt162 (3) 710 (1967)https://doi.org/10.1103/PhysRev.162.710
Interband faraday rotation of II–VI compounds
M. Balkanski, E. Amzallag and D. Langer27 (2) 299 (1966)https://doi.org/10.1016/0022-3697(66)90036-9
Exciton Spectrum of ZnO
Y. S. Park, C. W. Litton, T. C. Collins and D. C. Reynolds143 (2) 512 (1966)https://doi.org/10.1103/PhysRev.143.512
Some Optical Properties of Group II‐VI Semiconductors (I)
D. C. Reynolds, C. W. Litton and T. C. Collins9 (3) 645 (1965)https://doi.org/10.1002/pssb.19650090302
Energy level structure for the infra-red luminescence of cadmium sulphide and zinc sulphide
F J Bryant and A F J Cox16 (4) 463 (1965)https://doi.org/10.1088/0508-3443/16/4/308
Optical Effects of Energy Terms Linear in Wave Vector
G. D. Mahan and J. J. Hopfield135 (2A) A428 (1964)https://doi.org/10.1103/PhysRev.135.A428
Intéraction du champ de rayonnement avec des phonons simples et multiples dans les structures du type Wurtzite et Blende
M. Balkanski, M. Nusimovici and R. Le Toullec25 (3) 305 (1964)https://doi.org/10.1051/jphys:01964002503030500
Untersuchungen zur Polarisation der Exzitonen‐Annihilationsstrahlung in CdS‐Einkristallen
O. Goede and E. Gutsche6 (2) 511 (1964)https://doi.org/10.1002/pssb.19640060221
Galvanomagnetic Effects in Cadmium Sulfide
J. David Zook and Richard N. Dexter129 (5) 1980 (1963)https://doi.org/10.1103/PhysRev.129.1980
Electron and Hole Transport in CdS Crystals
W E Spear and J Mort81 (1) 130 (1963)https://doi.org/10.1088/0370-1328/81/1/319
Über die Ultrarot‐Lumineszenz von Zinksulfid‐Kristallen
H.‐J. Schulz3 (3) 485 (1963)https://doi.org/10.1002/pssb.19630030314
The faraday rotation due to free electrons in CdS
M. Balkanski and J. J. Hopfield2 (6) 623 (1962)https://doi.org/10.1002/pssb.19620020603
Optics in France
G. Amat, A. Arsac, J. Brochard, et al. 1 (3) 260 (1962)https://doi.org/10.1364/AO.1.000260
Spin-Orbit Splitting in CdS: Se Single Crystals
F. L. Pedrotti and D. C. Reynolds127 (5) 1584 (1962)https://doi.org/10.1103/PhysRev.127.1584
Selected Constants Relative to Semi-Conductors
Selected Constants Relative to Semi-Conductors 42 (1961)https://doi.org/10.1016/B978-0-08-009512-7.50018-4
