La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme CrossRef Cited-by Linking Program
Article cité :
Andrée Quilliet , Peter Gosar
J. Phys. Radium, 21 7 (1960) 575-578
Citations de cet article :
19 articles
Impact of dust accumulation and deposits on polycrystalline solar panel: Case of Senegal
Bouya Diop Abdoulaye, Niang Babacar, Wade Malick, et al. 16 (9) 335 (2022)https://doi.org/10.5897/AJEST2022.3112
Generalized models of the spectral response of the voltage for the extraction of recombination parameters in silicon devices
Helmut Mäckel and Andrés Cuevas98 (8) (2005)https://doi.org/10.1063/1.2115094
Contactless surface charge semiconductor characterization
Dieter K. Schroder91-92 196 (2002)https://doi.org/10.1016/S0921-5107(01)00993-X
Surface voltage and surface photovoltage: history, theory and applications
Dieter K Schroder12 (3) R16 (2001)https://doi.org/10.1088/0957-0233/12/3/202
Surface Photovoltage Measurement of Minority Carrier Diffusion Lengths Exceeding Wafer Thickness: Application to Iron Monitoring with Part Per Quadrillion Sensitivity
A.M. Kontkiewicz, J. Lagowski, M. Dexter and P. Edelman324 (1993)https://doi.org/10.1557/PROC-324-439
Method for the measurement of long minority carrier diffusion lengths exceeding wafer thickness
J. Lagowski, A. M. Kontkiewicz, L. Jastrzebski and P. Edelman63 (21) 2902 (1993)https://doi.org/10.1063/1.110292
Effect of wafer stress on surface photovoltage diffusion length measurements
I.G. Hwang and D.K. Schroder36 (8) 1147 (1993)https://doi.org/10.1016/0038-1101(93)90195-V
Theory of the photovoltage at semiconductor surfaces and its application to diffusion length measurements
S.C. Choo, L.S. Tan and K.B. Quek35 (3) 269 (1992)https://doi.org/10.1016/0038-1101(92)90231-Z
Comparison of minority-carrier diffusion length measurements in silicon by the photoconductive decay and surface photovoltage methods
Müzeyyen Saritas and Harry D. McKell63 (9) 4561 (1988)https://doi.org/10.1063/1.340155
Diffusion length studies in silicon by the surface photovoltage method
M. Saritas and H.D. McKell31 (5) 835 (1988)https://doi.org/10.1016/0038-1101(88)90036-6
Diffusion length determination in n+-p+-p+ structure based silicon solar cells from the intensity dependence of the short-circuit current for illumination from the p+ side
G.C. Jain, S.N. Singh and R.K. Kotnala8 (3) 239 (1983)https://doi.org/10.1016/0379-6787(83)90063-7
Longueur de diffusion des porteurs minoritaires et structure de jonction des diodes Cu/Cu2O
C. Noguet, D. Pierrat, M. Tapiero and J.P. Zielinger15 (3) 595 (1980)https://doi.org/10.1051/rphysap:01980001503059500
Nondestructive Evaluation of Semiconductor Materials and Devices
T. H. DiStefanohttps://doi.org/10.1007/978-1-4757-1352-7_9
Semiconductor profiling using an optical probe
D.L. Lile and N.M. Davis18 (7-8) 699 (1975)https://doi.org/10.1016/0038-1101(75)90142-2
Surface photovoltage and internal photoemission at the anodized InSb surface
D.L. Lile34 (2) 337 (1973)https://doi.org/10.1016/0039-6028(73)90122-2
The thin film MIS surface photodiode
D.L. Lile and H.H. Wieder13 (1) 15 (1972)https://doi.org/10.1016/0040-6090(72)90147-2
Determination of Optical Energy Gaps from Surface Photovoltage Measurements
D. L. Lile and H. H. Wieder43 (5) 2265 (1972)https://doi.org/10.1063/1.1661489
Bulk trapping effect on carrier diffusion length as determined by the surface photovoltage method: Theory
S.C. Choo and A.C. Sanderson13 (5) 609 (1970)https://doi.org/10.1016/0038-1101(70)90140-1
A Method for the Measurement of Short Minority Carrier Diffusion Lengths in Semiconductors
Alvin M. Goodman32 (12) 2550 (1961)https://doi.org/10.1063/1.1728351
