Numéro
J. Phys. Radium
Volume 17, Numéro 8-9, août-septembre 1956
Page(s) 806 - 812
DOI https://doi.org/10.1051/jphysrad:01956001708-9080600
J. Phys. Radium 17, 806-812 (1956)
DOI: 10.1051/jphysrad:01956001708-9080600

Propriétés électriques et optiques de quelques semi-conducteurs : Oxyde de zinc - sulfure de zinc - sélénium

R. Freymann, Y. Balcou, M.-L. Blanchard, H. Corneteau, M. Freymann, B. Hagène, M. Hagène, M. Lepage, J. Meinnel et R. Rohmer

Faculté des Sciences de Rennes


Abstract
I. Optical, photodielectrical and electrical summarized properties of the various types of ZnO. II. Study of the dipolar Debye absorption of several samples of ZnO in terms of frequency and temperature. The activation energies found by that method and by conductivity and thermoluminescence methods are in good agreement. III. Two types of photodielectric effect are proposed : photoconductivity (free carriers) and photodipolar effect (bound carriers). Impure selenium shows the 2nd one, but the activation energy decreases under irradiation. ZnS(Cu) shows absorption bands only under irradiation. For ZnO, the phenomena are intricate.

PACS
7220 - Conductivity phenomena in semiconductors and insulators.

Key words
dielectric properties -- photoconductivity -- selenium -- semiconductor materials -- zinc compounds